Publications

• K. V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, "Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures," Appl. Phys. Lett. 75, 2250 (1999).

• K. V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, "Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy," to appear in J. Elec. Mater. (2000).

• K. V. Smith, X. Z. Dang, E. T. Yu, and J. M. Redwing, "Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy," submitted to J. Vac. Sci. Technol. B (2000).

• Q. Z. Liu, L. Shen, K. V. Smith, E. T. Yu, S. S. Lau, N. R. Perkins, and T. F. Kuech, "Epitaxy of Al Films on GaN Studied by Reflection High EnergyElectron Diffraction and Atomic Force Microscopy," Appl. Phys. Lett. 70, 990 (1997).

• C. H. Yun, N. W. Cheung, Y. Zheng, R. J. Welty, Z. F. Guan, K. V. Smith, P. M. Asbeck, E. T. Yu, and S. S. Lau, "Transfer of patterned ion-cut silicon layers," Appl. Phys. Lett. 73, 2772 (1998).

• Q.Z. Liu,  L.S. Yu, K.V. Smith,  F. Deng, C.W. Tu, P.M. Asbeck, E.T. Yu, and S.S. Lau, " Metal-GaN contact technology," Proceedings of the Second Symposium on III-V Nitride Materials and Processes,  Electrochem. Soc, 11 (1998)

• Q.Z. Liu, K.V. Smith, E.T. Yu, S.S. Lau, N.R. Perkins, and  T.F. Kuech, "On the epitaxy of metal films on GaN." III-V Nitrides Symposium,  Mater. Res. Soc, 1079 (1997).

Conferences

• K. V. Smith, X. Z. Dang, E. T. Yu, and J. M. Redwing, "Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy," 27th Conference on the Physics and Chemistry of Semiconductor Interfaces (2000).

• K. V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, "Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy," 41st Electronic Materials Conference Abstracts, p. 27 (1999).

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